Influence of Al content on the properties of ternary Al2xIn2−2xO3 alloy films prepared on YSZ (111) substrates by MOCVD-Reference-Cited by-同舟云学术

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Influence of Al content on the properties of ternary Al2xIn2−2xO3 alloy films prepared on YSZ (111) substrates by MOCVD

Published:2015-10 Issue: Volume:70 Page:354-357
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Feng Xianjin,Zhao Cansong,Li Zhao,Luo Yi,Ma Jin

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Directly patternable SnO2 thin films incorporating Pt nanoparticles;Kim;Mater. Res. Bull.,2014

2. Transport and angular resolved photoemission measurements of the electronic properties of In2O3 bulk single crystals;Scherer;Appl. Phys. Lett.,2012

3. White-light luminescence properties of Mg and Sn doped ZnO prepared by thermal oxidation;Zeng;Mater. Res. Bull.,2014

4. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers;Zhang;Appl. Phys. Lett.,2010

5. Growth of MgxZn1−xO film by MOCVD equipped laser heating system;Ito;Mater. Sci. Eng. B,2010

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1. Nanodots and microwires of ZrO 2 grown on LaAlO 3 by photo-assisted metal–organic chemical vapor deposition;Chinese Physics B;2016-02

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