Size effect on electronic transport in nC–Si/SiO core/shell quantum dots-Reference-Cited by-同舟云学术

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Size effect on electronic transport in nC–Si/SiO core/shell quantum dots

Published:2012-11 Issue:11 Volume:47 Page:3625-3629
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Das Debajyoti,Samanta Arup

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Council of Scientific and Industrial Research, India

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. Crystallographic study of semi‐insulating polycrystalline silicon (SIPOS) doped with oxygen atoms

2. High current injection into SiO2 from Si rich SiO2 films and experimental applications

3. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

4. Visible light emission due to quantum size effects in highly porous crystalline silicon

5. Quantum Confinement in Size-Selected, Surface-Oxidized Silicon Nanocrystals

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1. Effect of He diluted plasma on the deposition of flexible low-temperature polycrystalline silicon thin film;Journal of Vacuum Science & Technology A;2023-12-29

2. Self-organized Ge_1−xSn _x quantum dots formed on insulators and their room temperature photoluminescence;Japanese Journal of Applied Physics;2023-07-01

3. Ultraviolet, visible and near infrared photoresponse of SiO2/Si/SiO2 multilayer system into a MOS capacitor;Materials Science in Semiconductor Processing;2021-11

4. Frequency and temperature dependent electrical characteristics of P-doped nc-SiOX:H thin films;Materials Science and Engineering: B;2021-10

5. Phosphorus-doped nanocrystalline silicon-oxycarbide thin films;Journal of Alloys and Compounds;2021-09

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