Ge photodiodes as transfer standards for radiant power measurements in the field of fibre optics
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics,Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation
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2. Effect of a SiO₂ Anti-reflection Layer on the Optoelectronic Properties of Germanium Metal-semiconductor-metal Photodetectors;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2017-08-31
3. Measurement of the nonlinearity of Ge-and InGaAs-photodiodes at high irradiance levels;MAPAN;2010-03
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