Microstructure characterization of InAs0.93Sb0.07 films grown by ramp-cooled liquid phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
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3. MBE growth of room-temperature InAsSb mid-infrared detectors
4. Liquid-phase-epitaxial InAsySb1−y on GaSb substrates using GaInAsSb buffer layers: growth, characterization, and application to mid-IR photodiodes;Zysking;J Appl Phys,1987
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1. A buffer-free method for growth of InAsSb films on GaAs (001) substrates using MOCVD;Journal of Crystal Growth;2017-06
2. Properties of InAsSb films grown on GaSb by metal-organic chemical vapor deposition;Procedia Engineering;2017
3. Band to band optical absorption in LPE-growth InAs0.94Sb0.06 film;Infrared Physics & Technology;2015-07
4. Two methods for characterizing the electrical properties of InAsSb film grown by liquid phase epitaxy;SPIE Proceedings;2015-04-13
5. Evolution of Raman spectra in n-InAs wafer with annealing temperature;Applied Surface Science;2014-01
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