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Microstructure evolution and mechanical properties of Cu-Sn intermetallic joints subjected to high-temperature aging

  • Published:2022-04 Issue: Volume:186 Page:111791
  • ISSN:1044-5803
  • Container-title:Materials Characterization
  • language:en
  • Short-container-title:Materials Characterization

Author:

Zhang Hu,Li Xiaoyan,Yao Peng,Wen Linjie,Zhu Yangyang,He Xi,Yang Gangli

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference47 articles.

1. Die-attachment solutions for SiC power devices;Kisiel;Microelectron. Reliab.,2009

2. High-temperature electronics - a role for wide bandgap semiconductors?;Neudeck;Proc. IEEE,2002

3. Power conversion with SiC devices at extremely high ambient temperatures;Funaki;IEEE Trans. Power Electron.,2007

4. P–N junction and metal contact reliability of SiC diode in high temperature (873K) environment;Chand;Solid State Electron.,2014

5. Wide bandgap semiconductors for sensing within extreme harsh;Senesky;Environments,2013
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