Tunable laser diode study of the ν3 band of SiF4 near 9.7 μm-Reference-Cited by-同舟云学术

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Tunable laser diode study of the ν3 band of SiF4 near 9.7 μm

Published:1982-02 Issue:2 Volume:91 Page:416-423
ISSN:0022-2852
Container-title:Journal of Molecular Spectroscopy
language:en
Short-container-title:Journal of Molecular Spectroscopy

Author:

Patterson C.W.,McDowell R.S.,Nereson N.G.,Krohn B.J.,Wells J.S.,Petersen F.R.

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Atomic and Molecular Physics, and Optics

Reference36 articles.

1. CO2 Laser-Induced Dissociation of SiF4 Molecules into Electronically Excited Fragments

2. Evidence of tumbling multiplets in saturation absorption spectra of SiF_4

3. Investigation of narrow resonances in the saturation of the absorption of CO20001–0200 radiation in silicon tetrafluoride

4. Photon echo measurements in SF6and SiF4

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1. Analysis of high-resolution spectra of SiF4 combination bands;Journal of Molecular Spectroscopy;2023-01

2. High-resolution spectroscopy and analysis of the ν3, ν4 and 2ν4 bands of SiF4 in natural isotopic abundance;Journal of Quantitative Spectroscopy and Radiative Transfer;2020-09

3. High-resolution Fourier-transform IR spectroscopic determination of impurities in silicon tetrafluoride and silane prepared from it;Inorganic Materials;2006-08

4. Integral intensities of absorption bands of silicon tetrafluoride in the gas phase and cryogenic solutions: Experiment and calculation;Optics and Spectroscopy;2005-02

5. Density functional computations of the dipole moment derivatives for halogenated silanes;Journal of Molecular Structure: THEOCHEM;1996-03

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