1/f Noise in CMOS transistors for analog applications from subthreshold to saturation

Author:

Jakobson C.,Bloom I.,Nemirovsky Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Noise in solid-state microstructures: A new perspective on individual defects, interface states, and low-frequency (1/f) noise;Kirton;Adv. Phys.,1989

2. Simonne, J. J., Blasquez, G. and Barbottin, G., 1/f noise in MOSFETs, in Instabilities in Silicon Devices: Silicon Passivation and Related Instabilities, Vol. 2. Elsevier, Amsterdam, 1989, pp. 639–657

3. McWhorter, A. L., 1/f noise and germanium surface properties, in Semiconductor Surface Physics. Univ. Pennsylvania Press, Philadelphia, 1957, pp. 207–228

4. Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion-influence of surface states;Reimbold;IEEE Trans. Electron Dev.,1984

5. Reconciliation of different gate-voltage dependencies of 1/f noise in n-mos and p-mos transistors;Scofield;IEEE Trans. Electron Dev.,1994

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