Electrical behaviour of metal/tetrahedral amorphous carbon/metal structure-Reference-Cited by-同舟云学术

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Electrical behaviour of metal/tetrahedral amorphous carbon/metal structure

Published:1999-02 Issue:2 Volume:43 Page:427-434
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Liu E.,Shi X.,Cheah L.K.,Hu Y.H.,Tan H.S.,Shi J.R.,Tay B.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. A hydrogen−sensitive MOS field−effect transistor

2. Pd-MOS hydrogen and hydrocarbon sensor device

3. A study of Pd/Si MIS Schottky barrier diode hydrogen detector

4. Comparison and analysis of Pd‐ and Pt‐GaAs Schottky diodes for hydrogen detection

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bulk-limited electrical behaviors in metal/hydrogenated diamond-like carbon/metal devices;Applied Physics Letters;2018-01-15

2. Ultrathin undoped tetrahedral amorphous carbon films: The role of the underlying titanium layer on the electronic structure;Diamond and Related Materials;2015-08

3. Ultrathin undoped tetrahedral amorphous carbon films: thickness dependence of the electronic structure and implications for their electrochemical behaviour;Physical Chemistry Chemical Physics;2015

4. He+ irradiation temperature influence on the structure and nanohardness of hydrocarbon films;Journal of Nuclear Materials;2013-09

5. The influence of helium ion irradiation on amorphous hydrocarbon films;Journal of Nuclear Materials;2013-04

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