Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy-Reference-Cited by-同舟云学术

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Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy

Published:1998-12 Issue:12 Volume:42 Page:2183-2185
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hickman R,Van Hove J.M,Chow P.P,Klaassen J.J,Wowchack A.M,Polley C.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

2. High-temperature performance of AlGaN/GaN HFETs on SiC substrates

3. Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Uniformity of AlGaN∕GaN HEMTs Grown by Ammonia-MBE on 2-in. Sapphire Substrate;Journal of The Electrochemical Society;2005

2. Temperature Dependence of DC Characteristics in AlN/GaN Metal Insulator Semiconductor Field Effect Transistor;Materials Science Forum;2002-04

3. High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates;Applied Physics Letters;2002-03-25

4. Plasma etching of GaN and related materials;Handbook of Thin Films;2002

5. Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers;Applied Physics Letters;2000-03-27

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