Effect of deposition condition on wet and dry etch rates of device quality inductively coupled plasma-chemically vapor deposited SiNx-Reference-Cited by-同舟云学术

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Effect of deposition condition on wet and dry etch rates of device quality inductively coupled plasma-chemically vapor deposited SiNx

Published:1998-11 Issue:11 Volume:42 Page:2017-2021
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hahn Y.B,Lee J.W,Mackenzie K.D,Johnson D,Pearton S.J,Ren F

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Pseudomorphic HEMT Devices for Microwave and Millimeter Wave Applications

2. Low Temperature SiNx as a Sacrificial Layer in Novel Device Fabrication

3. Passivation of GaAs FET's with PECVD silicon nitride films of different stress states

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Autogenic single p/n-junction solar cells from black-Si nano-grass structures of p-to-n type self-converted electronic configuration;Nanoscale;2020

2. Combinatorial survey of fluorinated plasma etching in the silicon-oxygen-carbon-nitrogen-hydrogen system;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-11

3. Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation;Journal of Electronic Materials;2015-03-06

4. Low-temperature ICPECVD of silicon nitride in SiH4–NH3–Ar discharges analyzed by spectroscopic ellipsometry and etch behavior in KOH and BHF;Surface and Coatings Technology;2001-07

5. Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition;Journal of The Electrochemical Society;2000

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