The metal-overlap laterally-diffused (mold) Schottky diode-Reference-Cited by-同舟云学术

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The metal-overlap laterally-diffused (mold) Schottky diode

Published:1977-01 Issue:6 Volume:20 Page:499-IN1
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Rusu A.,Bulucea C.,Postolache C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Enhanced breakdown voltage in planar metal‐overlap laterally diffused (MOLD) Schottky diodes

2. Conduction properties of the Au-n-type—Si Schottky barrier

3. Silicon Schottky Barrier Diode with Near-Ideal I-V Characteristics

4. p-n junction—Schottky barrier hybrid diode

5. Characteristics of aluminum-silicon schottky barrier diode

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonlinear Series Resistance Behavior in Schottky Diodes;2024 Argentine Conference on Electronics (CAE);2024-03-07

2. A Schottky-barrier diode with self-aligned floating guard ring;IEEE Transactions on Electron Devices;1984-10

3. Changes in breakdown characteristics of planar Al/nSi Schottky diodes during the postmetallization heat treatment;Solid-State Electronics;1984-04

4. SVG guard-ring Al-Ti-Si schottky diode for high-speed LSI applications;IEE Proceedings I Solid State and Electron Devices;1984

5. Etch-induced MOS guard-ring-protected schottky-barrier diodes;IEE Proceedings I Solid State and Electron Devices;1984

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