Author:
Rodwell Mark,Lee Q,Mensa D,Guthrie J,Martin S.C,Smith R.P,Pullela R,Agarwal B,Jaganathan S,Mathew T,Long S
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Ultrahigh-speed InP/InGaAs double-heterostructure bipolar transistors and analyses of their operation;Matsuoka;J. of Appl. Phys,1996
2. An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs;Stanchina,1995
3. A >400 GHz fmax transferred-substrate heterojunction bipolar transistor IC technology;Lee;IEEE Electron Dev. Lett,1998
4. Vaidyanathan M, Pulfrey DL, Extrapolated fmax of heterojunction bipolar transistors, IEEE Transactions on Electron Devices (submitted)
5. HBT IC process with a copper substrate;Guthrie;IEE Electronics Letters,1998
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