Current filamentation in bipolar power devices during dynamic avalanche breakdown-Reference-Cited by-同舟云学术

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Current filamentation in bipolar power devices during dynamic avalanche breakdown

Published:2000-01 Issue:1 Volume:44 Page:117-123
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Oetjen J,Jungblut R,Kuhlmann U,Arkenau J,Sittig R

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Hard drive of high power GTOs: better switching capability obtained through improved gate-units;Gruening,1996

2. Hybrid 3000A-MOSFET for GTO-cascode Switches;Oetjen,1997

3. Snubberless turn-off capability of four-inch 4.5 kV GCT Thyristor;Takata,1998

4. Hybride GTO-Kaskode;Oetjen,1999

5. ISE. DESSIS Reference Manual Version 1.3. Zürich: ISE Integrated Engineering AG, 1994.

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