A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. High-frequency characteristics of low-temperature pseudo-heterojunction bipolar transistors
2. Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors
3. High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base
4. Resonant tunneling transistor with quantum well base and high‐energy injection: A new negative differential resistance device
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1. Carrier-Transport Processes in n+-GaAs/n0-GaAs/n+-GaAs Isotype Heterostructures with a Thin Wide-Gap AlGaAs Barrier;Semiconductors;2020-05
2. Electron transmission in symmetric and asymmetric double-barrier structures controlled by laser fields;Superlattices and Microstructures;2015-09
3. Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application;Solid-State Electronics;2005-03
4. Relationship of resonant energies and Bloch wave vectors in resonant tunneling in superlattices;Journal of Applied Physics;2002-07-15
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