Author:
Chen Shou Mian,Ip Suk-Yin Flora
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Recent developments in N2O/NO-based ultra-thin oxynitride gate dielectrics for CMOS ULSI applications;Han,1995
2. characteristics of NH3-nitrided N2O grown oxides;Yoon;IEEE Electron. Device Lett.,1993
3. Kim BY, Liu IM, Min BW, Luan HF, Gardner M, Fulford J, Kwong DL. Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETS VLSI Technol. Syst. Appl. 1997;182–187
4. Ultra-thin nitrided-oxide gate dielectrics prepared by RTP for ULSI applications;Hori,1997
5. Wu Y, Lucovsky G. Improvement of gate dielectric reliability for p+ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides. IEEE Int. Reliabil. Phys. Symp. Proc.1998;70–75
Cited by
17 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献