A distributed gate bistable MOS transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Complete Semiconductor Transistor and Its Incomplete Forms;Journal of Semiconductors;2009-06
2. The Bipolar Field-Effect Transistor: XIII. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base);Journal of Semiconductors;2009-02
3. The new general realization theory of FET-like integrated voltage-controlled negative differential resistance devices;IEEE Transactions on Circuits and Systems;1981-05
4. Theoretical and experimental characterization of the DUal-BAse transistor (DUBAT);Solid-State Electronics;1980-11
5. Generalized theory and realization of a voltage-controlled negative resistance MOS device (lambda MOSFET);Solid-State Electronics;1980-01
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