The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments-Reference-Cited by-同舟云学术

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The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments

Published:2003-06 Issue:6 Volume:47 Page:1111-1115
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Li Ying,Niu Guofu,Cressler John D.,Patel Jagdish,Liu S.T.,Reed Robert A.,Mojarradi Mohammad M.,Blalock Benjamin J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Worst case total dose radiation response of 0.35 μm SOI CMOSFETs;Liu;IEEE Trans. Nucl. Sci.,1999

2. Total dose radiation hard 0.35 μm SOI CMOS technology;Liu;IEEE Trans. Nucl. Sci.,1998

3. Total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology;Niu;IEEE Trans. Electron. Dev.,1999

4. MOS device modeling at 77 K;Selberherr;IEEE Trans. Electron. Dev.,1989

5. Simple method to characterize substrate current in MOSFET’s;Chan;IEEE Electron. Dev. Lett.,1984

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