4H-SiC metal–semiconductor–metal ultraviolet photodetectors with Ni/ITO electrodes-Reference-Cited by-同舟云学术

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4H-SiC metal–semiconductor–metal ultraviolet photodetectors with Ni/ITO electrodes

Published:2002-12 Issue:12 Volume:46 Page:2237-2240
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Su Yan-Kuin,Chiou Yu-Zung,Chang Chia-Sheng,Chang Shoou-Jinn,Lin Yi-Chao,Chen Jone F

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Large-band-gap SiC, III–V nitride, and II–VI ZnSe-based semiconductor device technologies;Morkoç;J. Appl. Phys.,1994

2. Detection of ultraviolet radiation using silicon carbide p–n junctions;Campbell;Solid State Electron.,1967

3. UV photodetectors in 6H–SiC;Anikin;Sensors Actuators A,1992

4. Blue LED's, photodiodes and high-temperature rectifiers in 6H–SiC;Edmond;Phys. B,1993

5. Silicon carbide UV photodiodes;Brown;IEEE Trans. Electron. Dev.,1993

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