A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of highly doped layers-Reference-Cited by-同舟云学术

A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of highly doped layers

Published:2002-09 Issue:9 Volume:46 Page:1351-1358
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cuscunà M,Bonfiglietti A,Carluccio R,Mariucci L,Mecarini F,Pecora A,Stanizzi M,Valletta A,Fortunato G

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

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2. Low-temperature polysilicon thin-film transistor driving with integrated driver for high resolution light emitting polymer display;Kimura;IEEE Trans Electron Dev,1999

3. Control and analysis of leakage currents in poly-Si thin-film transistors;Brotherton;J Appl Phys,1996

4. Floating body effects in polysilicon thin-film transistors;Valdinoci;IEEE Trans Elec Dev,1997

5. Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors;Mariucci;J Appl Phys,1998

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