A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs

Author:

Prégaldiny Fabien,Lallement Christophe,Mathiot Daniel

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. A compact-charge LDD-MOSFET model;Klein;IEEE Trans. Electron Dev.,1997

2. Schuler F, Hoffmann K, Klein P. Source–drain-C(V)-behaviour of short channel LDD-MOSFETs. In: ESSDERC’98 1998. p. 108–11

3. Parasitic capacitance of submicrometer MOSFET’s;Suzuki;IEEE Trans. Electron Dev.,1999

4. A simple formula for two-dimensional capacitance;Cetner;Solid State Electron.,1988

5. A non-linear microwave MOSFET model for spice simulators;Bieber;IEEE Trans. Microwave Theory Tech.,1998

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