Author:
Zhao J.H,Li X,Tone K,Alexandrov P,Pan M,Weiner M
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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3. Alexandrov P, Zhao JH, Wright W, Pan M, Weiner M. Inductively-loaded half-bridge inverter characterization of 4H-SiC merged P–i–N/Schottky (MPS) diode up to 230A and 250 C. IEE Electron Lett, 2001;37(20):1261–2
4. 3100 V, asymmetrical, gate turn-Off(GTO) thyristors in 4H-SiC;Ryu;IEEE Electron. Dev. Lett.,2001
5. Large area (3.3mm×3.3 mm) power MOSFETs in 4H-SiC;Ryu,2001
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