Extraction of deep trap parameters from photocurrent transients by two-dimensional spectral analysis-Reference-Cited by-同舟云学术

Extraction of deep trap parameters from photocurrent transients by two-dimensional spectral analysis

Published:2002-11 Issue:11 Volume:46 Page:1879-1885
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Pawlowski Michal

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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5. Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transient;Kaminski;Mat Sci Eng,1996

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