Design and modeling of bulk and SOI power LDMOSFETs for RF wireless applications

Author:

Trivedi M.,Khandelwal P.,Shenai K.,Leong S.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Yoshida I, Katsueda M, Ohtaka S, Murayama Y, Okabe T. High efficiency 1.5 GHz power MOSFET for digital cellular front-end. Proc Intl Symp Power Semic Dev ICs 1992. p. 156–7

2. Robb SP, Sutor JL, Terry L. Industry trends in power integrated circuits. IEEE Intl Electron Dev Mtg Tech Dig 1988. p. 792

3. Natalino Camilleri, Julio Costa, David Lovelace, David Ngo. Silicon MOSFETs, the microwave technology for the 90s. IEEE MTT-S Dig 1993. p. 545–8

4. Chris Dragon, Julio Costa, Dan Lamey, David Ngo, Wayne Burger. A silicon MOS process for integrated power amplifiers. Proc IEEE Microwave Millimeter Wave Monolithic Circuits Symp 1996. p. 189–92

5. Alan Wood, Chris Dragon, Wayne Burger. High performance silicon LDMOS technology for 2 GHz power amplifier applications. IEEE Intl Electron Dev Mtg Tech Dig 1996. p. 87–90

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