Author:
Zahlmann-Nowitzki J.-W,Nebrich L,Seegebrecht P
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Chatterjee PK, Hunter WR, Amerasekera A, Aur S, Duvvury C, Nicollian PE, Ting LM, Yang P. Trends for Deep Submicron VLSI and Their Implications for Reliability. IEEE Proceedings of International Reliability Physics Symposium IRPS 1995:1–11
2. Accelerated Dielectric Breakdown and Wear Out Standard Testing Methods and Structures for Reliability Evaluation of Thin Oxide;Ghibaudo;Microelectronics Reliability,1999
3. Correlation of Stress Induced Leakage Current in Thin Oxides with Trap Generation Inside the Oxide;Dumin;IEEE Transaction on Electron Devices,1993
4. MOSFET Degradation Due to Stressing of Thin Oxide;Liang;IEEE Transaction on Electron Devices,1984
5. Ghidini G, Brazelli D, Clementi C, Pellizzer F. Charge Trapping Mechanism under Dynamic Stress and it’s Effect on Failure Time. IEEE Proceedings of International Reliability Physics Symposium IRPS 1999:88–92
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献