Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors-Reference-Cited by-同舟云学术

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Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors

Published:2000-12 Issue:12 Volume:44 Page:2117-2122
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

LaRoche J.R.,Ren F.,Temple D.,Pearton S.J.,Kuo J.M.,Baca A.G.,Cheng P.,Park Y.D.,Hudspeth Q.,Hebard A.F.,Arnason S.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Spin-valve effects in a semiconductor field-effect transistor: A spintronic device

2. Electron Spin and Optical Coherence in Semiconductors

3. Injection and detection of a spin-polarized current in a light-emitting diode

4. Spin transport in GaAs

5. Schimidt G, Molenkamp LW. Condens Mat 1999:1

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical calculations to investigate thermodynamic properties of 2D electron gas in InP/InPBiN quantum structure;Results in Physics;2023-11

2. Selective etching of InGaAs/InP substrates from II-VI multilayer heterostructures;physica status solidi (c);2012-07-06

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