Characterization of MOSFETs fabricated on large-grain polysilicon on insulator-Reference-Cited by-同舟云学术

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Characterization of MOSFETs fabricated on large-grain polysilicon on insulator

Published:2001-05 Issue:5 Volume:45 Page:743-749
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jagar Singh,Chan Mansun,Wang Hongmei,Poon Vincent M.C.,Myasnikov A.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Wu IW. Cell design considerations for high-aperture-ratio direct-view and projection polysilicon TFT-LCD's. Dig Tech Papers SID 1995:19–22

2. Characteristics and three dimensional integration of MOSFET's in small grain LPCVD polycrystalline silicon;Malhi;IEEE Trans Electron Dev,1985

3. The electrical properties of the polycrystalline silicon film;Seto;J Appl Phys,1975

4. Effects of grain boundaries on the channel conductance of the SOI MOSFET's;Fossum;IEEE Trans Electron Dev,1983

5. Field effect in the large grain polycrystalline silicon;Colinge;IEEE Trans Electron Dev,1983

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