Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times-Reference-Cited by-同舟云学术

Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times

Published:2001-12 Issue:12 Volume:45 Page:2097-2100
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Eberhardt Jochen,Kasper Erich

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

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2. Growth of 100 GHz SiGe heterobipolar transistor structures;Kasper;Jpn J Appl Phys,1994

3. Gruhle A, Kibbel H, Schurr A, Behammer D, König U. SiGe heterojunction bipolar transistors with 156 GHz transit frequency. 196th Meet Electrochem Soci, 1999

4. Schüppen A, Erben U, Gruhle A, Kibbel H, Schuhmacher H, König U. Enhanced SiGe heterojunction bipolar transistors with 160 GHz-fmax. Techn Dig IEDM 95. Piscataway: IEEE; 1995. p. 743

5. Mau H, Nuernbergk D, Schwierz D, Rossberg M, Paasch G, Schipanski G. Dependence of the cutoff frequency on Ge profiles, base and collector widths in SiGe HBTs. Proc Second Intern Caracas Conf Dev Circ Syst 1998. p. 33

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