Author:
Ivanov Pavel A,Levinshtein Michael E,Rumyantsev Sergey L,Ryu Sei-Hyung,Agarwal Anant K,Palmour John W
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
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2. Agarwal AK, Ryu SH, Singh R, Palmour JW. 2600 V, 12 A, 4H-SiC, asymmetrical gate turn-off (GTO) thyristor development. Proc ICSCRM'99, Research Triangle Park, NC, 10–15 October, 1999. Switzerland: Trans Tech Publications Ltd; p. 1387–90
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