A new process for the fabrication of silicon-on-insulator structures by using porous silicon-Reference-Cited by-同舟云学术

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A new process for the fabrication of silicon-on-insulator structures by using porous silicon

Published:1997-09 Issue:4 Volume:32 Page:287-290
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Chang Chunk Cheng,Chen Lai Cheuan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Silicon on Insulator Technology: Materials to VLSI;Colinge,1991

2. Hot-electron effects in Silicon-on-insulator n-channel MOSFET's

3. Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs

4. IEEE Int. SOI Conf. Proc., PI 86;Buttler,1993

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1. Fabrication and characterization of porous Si/CuO film for visible light MSM photodetector: The effect of post-processing temperature;Ceramics International;2021-12

2. FORMATION AND PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON/COPPER OXIDE NANOCOMPOSITES FABRICATED VIA ELECTROCHEMICAL DEPOSITION TECHNIQUE FOR PHOTODETECTOR APPLICATION;Digest Journal of Nanomaterials and Biostructures;2021-01

3. Correlation between optical properties surface morphology of porous silicon electrodeposited by Fe 3+ ion;Superlattices and Microstructures;2015-01

4. Investigation of Random Telegraph Signal with PD SOI MOSFETs;ECS Transactions;2012-04-27

5. Electrical properties of the metal/porous silicon/Si(M/PS/Si) microstructure;Acta Physica Sinica;2011

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