Gas-phase parasitic reactions and Al incorporation efficiency in light radiation heating, low-pressure metal–organic chemical vapor deposition of AlGaN-Reference-Cited by-同舟云学术

Gas-phase parasitic reactions and Al incorporation efficiency in light radiation heating, low-pressure metal–organic chemical vapor deposition of AlGaN

Published:2000-10 Issue:6 Volume:45 Page:331-335
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Zhou Y.G,Zhang R,Li W.P,Shen B,Chen P,Chen Z.Z,Gu S.L,Shi Y,Zheng Y.D,Huang Z.C

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. GaN Growth Using GaN Buffer Layer

3. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates

4. High transconductance heterostructure field‐effect transistors based on AlGaN/GaN

5. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

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