Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP-Reference-Cited by-同舟云学术

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Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP

Published:2003-11 Issue:29 Volume:57 Page:4601-4604
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Kim Nam-Hoon,Lim Jong-Heun,Kim Sang-Yong,Chang Eui-Goo

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Copper—Fundamental Mechanisms for Microelectronic Applications;Murarka,2000

2. Chemical Mechanical Planarization of Microelectronic Materials;Steigerwald,1997

3. 8th VMIC Conference Proceedings, Santa Clara;Jindal,2001

4. 6th CMP-MIC Conference Proceedings, Santa Clara;Chou,2001

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1. Angstrom surface on copper induced by novel green chemical mechanical polishing using ceria and silica composite abrasives;Applied Surface Science;2023-12

2. Synergistic Effect of Complexing Agent TAD and Corrosion Inhibitor PZ on BTA Removal in Copper Post-CMP Cleaning;ECS Journal of Solid State Science and Technology;2023-08-01

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4. Feasibility of Using H3PO4/H2O2 in the Synthesis of Antimicrobial TiO2 Nanoporous Surfaces;Bioinorganic Chemistry and Applications;2021-12-11

5. Generation of reactive oxygen species from oxygen microbubbles in phosphoric acid solution and its application of ferrous iron oxidation;Journal of the Taiwan Institute of Chemical Engineers;2021-08

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