Effects of annealing processing on morphological, compositional and Schottky characterization of PtSi/Si diodes
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Tunable, long‐wavelength PtSi/SiGe/Si Schottky diode infrared detectors
2. 7-μm-cutoff PtSi infrared detector for high sensitivity MWIR applications
3. High-temperature epitaxy of PtSi/Si(0 0 1)
4. High-resolution electron microscope study of the PtSi-Si(111) interface
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1. Current–Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range;Journal of Electronic Materials;2022-12-08
2. FORMATION OF PLATINUM SILICIDE DURING RAPID THERMAL PROCESSING OF THE PLATINUM- SILICON SYSTEM: MICROSTRUCTURE AND ELECTROPHYSICAL CHARACTERISTICS;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2019
3. Formation of intermetallics in Pt/Al system as a function of Pt layer thickness;Thin Solid Films;2017-06
4. A room temperature 2 × 128 PtSi/Si-nanostructure photodetector array compatible with CMOS process;Sensor Review;2015-06-15
5. Defect-assisted tunneling current-transport mechanism for Schottky diodes of Pt thin film on p-SiNWs tips;Microelectronic Engineering;2013-03
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