Effect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs-Reference-Cited by-同舟云学术

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Effect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs

Published:1992-01 Issue: Volume:23 Page:23-71
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Miyazawa Shintaro

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference72 articles.

1. High-speed integrated logic with GaAs MESFET's

2. Uniformity evaluation of MESFET's for GaAs LSI fabrication

3. 1985 Semi-Insulating III-V Materials;Miyazawa,1986

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1. Defect Formation During Crystal Growth from the Melt;Springer Handbook of Crystal Growth;2010

2. Optical nonlinearities at transient quenching of EL2 defect at room temperature;Optics Communications;1999-10

3. Education programmes in materials science and engineering;Materials Science and Engineering: A;1995-08

4. Materials engineering for optoelectronic crystals related to III–V compounds;Journal of Thermal Analysis;1995-03

5. Photodiffractive Characterization of Growth-Defects in GaAs;MRS Proceedings;1995

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