Alternative precursors for III–V MOVPE — Promises and problems
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference69 articles.
1. SINGLE‐CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
2. MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates
3. Kinetics of GaAs growth by low pressure MO-CVD
4. Variations in trimethylindium partial pressure measured by an ultrasonic cell on an MOVPE reactor
5. MOMBE and MOVPE—A comparison of growth techniques
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2. Decomposition Mechanisms of Di-tert-butylaminoarsane (DTBAA);Organometallics;2019-08-15
3. An experimental approach for real time mass spectrometric CVD gas phase investigations;Scientific Reports;2018-01-10
4. β-Hydrogen Elimination Mechanism in the Absence of Low-Lying Acceptor Orbitals in EH2(t-C4H9) (E = N–Bi);Inorganic Chemistry;2015-06-22
5. A quantum chemical study on gas phase decomposition pathways of triethylgallane (TEG, Ga(C2H5)3) and tert-butylphosphine (TBP, PH2(t-C4H9)) under MOVPE conditions;Phys. Chem. Chem. Phys.;2014
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