Chemical beam epitaxy of Hg1 − xCdxTe and related binaries-Reference-Cited by-同舟云学术

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Chemical beam epitaxy of Hg1 − xCdxTe and related binaries

Published:1994-01 Issue:1-4 Volume:29 Page:161-216
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Summers C.J.,Wagner B.K.,Benz R.G.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference80 articles.

1. Molecular beam epitaxy of II–VI compounds: CdxHg1−xTe

2. Growth of CdTe and Hg‐based alloys by chemical‐beam epitaxy

3. Chemical beam epitaxy of CdTe, HgTe, and HgCdTe

4. Characterization of CdTe, HgTe, and Hg1−xCdxTe grown by chemical beam epitaxy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and Energetic Analysis of Group V Impurities in p-Type HgCdTe: The Case of As and Sb;Journal of Electronic Materials;2014-04-14

2. As Doping in (Hg,Cd)Te: An Alternative Point of View;Journal of Electronic Materials;2008-04-23

3. P-type as-doping of Hg1−xCdxTe grown by MOMBE;Journal of Electronic Materials;1998-06

4. Optimization of the structural properties of Hg1−x CdxTe (x = 0.18−0.30) alloys: Growth and modeling;Journal of Electronic Materials;1997-06

5. Intrinsic and extrinsic doping;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997

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