Mechanisms of charged-device electrostatic discharges-Reference-Cited by-同舟云学术

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Mechanisms of charged-device electrostatic discharges

Published:1992-09 Issue:3 Volume:28 Page:253-283
ISSN:0304-3886
Container-title:Journal of Electrostatics
language:en
Short-container-title:Journal of Electrostatics

Author:

Renninger Robert G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Biotechnology,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. A model for the failure of bipolar silicon integrated circuits subjected to electrostatic discharge;Speakman,1974

2. ESD damage from triboelectrically charged IC pins;Bossard,1980

3. Tape and reel packaging—an ESD concern;Jon,1988

4. A microwave-bandwidth waveform monitor for charged-device model simulators;Renninger,1988

5. A field-induced charged-device model simulator;Renninger,1989

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Prediction of the ESD Failure Current Based on a New Method Using the Shot Noise Model;IEEE Transactions on Electron Devices;2024-01

2. Analysis on the Influence Factors and Research Status of Non-contact Electrostatic Discharge;2023 IEEE 7th International Symposium on Electromagnetic Compatibility (ISEMC);2023-10-20

3. Study of charge transfer effects using ballistic method;Journal of Electrostatics;2002-10

4. Generalized model of electrostatic discharge (ESD) for bodies in approach: analyses of multiple discharges and speed of approach;Journal of Electrostatics;2002-01

5. Electrostatic discharges from charged cylindrical bodies to grounded or floating surfaces;IEEE Transactions on Industry Applications;2001

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