Shallow trench isolation double-diobe electrostatic discharge circuit and interaction with DRAM output circuitry-Reference-Cited by-同舟云学术

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Shallow trench isolation double-diobe electrostatic discharge circuit and interaction with DRAM output circuitry

Published:1993-12 Issue:2-3 Volume:31 Page:237-262
ISSN:0304-3886
Container-title:Journal of Electrostatics
language:en
Short-container-title:Journal of Electrostatics

Author:

Voldman Steven H.,Gross Vaughn P.,Hargrove Michael J.,Never James M.,Slinkman James A.,P.O'Boyle Martin,Scott Tom S.,Delecki Joseph J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Biotechnology,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Electrostatic discharge protection in a 14-Mb DRAM;Jaffe,1990

2. Effect of advanced process variations on thick oxide electrostatic discharge networks;McPhee,1985

3. ESD protection in one micron CMOS technology;Duvvury,1986

4. Thick oxide device ESD performance under process variations;McPhee,1986

5. Electrical overstress in NMOS silicided devices;Wilson,1987

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2. ESD Device Physics;The ESD Handbook;2021-03-26

3. ESD in Advanced CMOS;The ESD Handbook;2021-03-26

4. ESD Digital Design;The ESD Handbook;2021-03-26

5. ESD Architecture and Floor Planning;The ESD Handbook;2021-03-26

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