Electrical characterisation of ESD degradation in GaAs devices-Reference-Cited by-同舟云学术

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Electrical characterisation of ESD degradation in GaAs devices

Published:1993-11 Issue:1 Volume:31 Page:35-50
ISSN:0304-3886
Container-title:Journal of Electrostatics
language:en
Short-container-title:Journal of Electrostatics

Author:

Franklin Andrew J.,Dwyer Vincent M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Biotechnology,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Reliability investigation of 1 μm d-type MESFETs;Ogbonnah,1986

2. Accelerated active lifetest of GaAs FET and a new failure mode;Omori,1980

3. Electrostatic discharge effects on GaAs integrated circuits;Rubalcava,1986

4. Some aspects of GaAs MESFET reliability;Abbott;IEEE Trans. Mic. Theo. and Tech.,1976

5. Reliability study in GaAs MESFETs;Irie;IEEE Trans. Mic. Theo. and Tech.,1976

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