Nanoscale p–n junctions based on p-type ZnSe nanowires and their optoelectronic applications-Reference-Cited by-同舟云学术

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Nanoscale p–n junctions based on p-type ZnSe nanowires and their optoelectronic applications

Published:2016-04 Issue: Volume:168 Page:121-124
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Zhang Xiwei,Tang Zhenjie,Hu Dan,Meng Dan,Jia Shuanwen

Funder

National Natural Science Foundation of China

Science and Technology Development Project of the Henan province

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Synthesis of p-type phosphorus doped ZnSe nanowires and their applications in nanodevices

2. Tuning the p-type conductivity of ZnSe nanowiresvia silver doping for rectifying and photovoltaic device applications

3. High-Performance Blue/Ultraviolet-Light-Sensitive ZnSe-Nanobelt Photodetectors

4. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

5. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

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1. Annealing Effect on Structural, Optical and Electrophysical Properties of ZnSe Nanocrystals Synthesized into SiO2/Si Ion Track Template;Materials;2024-08-22

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3. Review of novel approach and scalability forecast of ZnSe and Perovskite/Graphene based thin film materials for high performance solar cell applications;Zeitschrift für Physikalische Chemie;2024-01-03

4. Nanowire-Based Photodetectors for Visible-UV Spectral Region;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

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