Improvement of phase change properties of stacked Ge2Sb2Te5/ZnSb thin films for phase change memory application-Reference-Cited by-同舟云学术

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Improvement of phase change properties of stacked Ge2Sb2Te5/ZnSb thin films for phase change memory application

Published:2016-12 Issue: Volume:185 Page:399-402
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

He Zifang,Wu Weihua,Liu Xinyi,Zhai Jiwei,Lai Tianshu,Song Sannian,Song Zhitang

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Reversible electrical switching phenomena in disordered structures;Ovshinsky;Phys. Rev. Lett.,1968

2. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements;Friedrich;J. Appl. Phys.,2000

3. Ultra-high speed and low-power superlattice-like Sn18Sb82–SnSe2 thin films for phase change memory applications;Liu;Mater. Lett.,2016

4. Carbon-doped Ge2Sb2Te5 phase change material: a candidate for high-density phase change memory application;Zhou;Appl. Phys. Lett.,2012

5. Nanoscale phase separation and building blocks Ge2Sb2Te5N and Ge2Sb2Te5N2 thin films;Borisenko;Chem. Mater.,2009

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