The effects of impurities on the generalized stacking fault energy of InP by first-principles calculation
Author:
Funder
Shanghai Jiao Tong University
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth
3. Effect of twin boundaries and structural polytypes on electron transport in GaAs
4. Optical properties of twinning superlattices in diamond-type and zinc-blende-type semiconductors
5. Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide 2. S doped InP
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