Surface passivation via two-step grown nitrogen infused oxidation derived quaternary AlxZr1−xOyNz-Reference-Cited by-同舟云学术

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Surface passivation via two-step grown nitrogen infused oxidation derived quaternary AlxZr1−xOyNz

Published:2020-10 Issue: Volume:276 Page:128175
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Quah Hock Jin,Lim Way Foong,Hassan Zainuriah

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Band offsets of high K gate oxides on III-V semiconductors

2. Feasibility of Atomic Layer Deposited AlZrOxFilm to Achieve High Performance and Good Stability of ZnSnO-TFT

3. A two-step growth route of ternary aluminium doped zirconium oxide film on silicon

4. Microstructure and electrical properties of Al2O3–ZrO2 composite films for gate dielectric applications

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