Inhibiting MoS2 formation by introducing a ZnO intermediate layer for Cu2ZnSnS4 solar cells

Author:

Li WeiORCID,Chen Jian,Cui Hongtao,Liu Fangyang,Hao Xiaojing

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Solar cell efficiency tables (version 43);Green;Prog Photovoltaics Res Appl,2014

2. Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency;Wang;Adv Energy Mater,2013

3. Co-evaporated Cu2ZnSnSe4 films and devices;Repins;Sol Energy Mater Sol Cells,2012

4. Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu2ZnSnS4 absorber;Shin;Prog Photovoltaics Res Appl,2011

5. Control of an interfacial MoSe2 layer in Cu2ZnSnS4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier;Shin;Appl Phys Lett,2012

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