Photoemission forward scattering from ErAs(100)/GaAs(100)-Reference-Cited by-同舟云学术

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Photoemission forward scattering from ErAs(100)/GaAs(100)

Published:2004-09 Issue:24 Volume:58 Page:2993-2996
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Jeong Hae-Kyung,Komesu Takashi,Yang Cheol-Soo,Dowben P.A,Schultz B.D,Palmstrøm C.J

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Contacts to Semiconductors: Fundamentals and Technology;Palmstrøm,1993

2. Spintronics: A Spin-Based Electronics Vision for the Future

3. Epitaxial growth of ErAs on (100)GaAs

4. Solid state phase equilibria in the Er-Ga-As system

5. Core-level binding-energy shifts at surfaces and in solids

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1. Surface-to-bulk core level shift in CoFe₂O₄ thin films;Journal of Vacuum Science & Technology A;2022-03

2. Effects of nanoscale embedded Schottky barriers on carrier dynamics in ErAs:GaAs composite systems;Physical Review B;2015-10-05

3. The stability and surface termination of hexagonal LuFeO3;Journal of Physics: Condensed Matter;2015-03-20

4. Adsorption of Dopamine on Rutile TiO2 (110): A Photoemission and Near-Edge X-ray Absorption Fine Structure Study;Langmuir;2014-07-17

5. Adsorption and Photocatalytic Degradation of 3-Fluoroaniline on Anatase TiO2(101): A Photoemission and Near-Edge X-ray Absorption Fine Structure Study;The Journal of Physical Chemistry C;2014-01-15

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