Characteristics of IGZO/Ni/IGZO tri-layer films deposited by DC and RF magnetron sputtering-Reference-Cited by-同舟云学术

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Characteristics of IGZO/Ni/IGZO tri-layer films deposited by DC and RF magnetron sputtering

Published:2017-10 Issue: Volume:205 Page:122-125
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Song Young-Hwan,Eom Tae-Young,Heo Sung-Bo,Cheon Joo-Yong,Cha Byung-Chul,Kim Daeil

Funder

University of Ulsan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Research on surface modification and infrared emissivity of In2O3:W thin films;Fu;Thin Solid Films,2014

2. Silver-based low emissivity coatings for architectural windows: optical and structural properties;Palma;Sol. Energy Mater. Sol. Cells,1998

3. Variation of optical and electrical properties of amorphous In–Ga–Zn–O/Ag/ amorphous In–Ga–Zn–O depending on Ag thickness;Kim;Thin Solid Films,2013

4. Highly transparent and infrared reflective AZO/Ag/AZO multilayer film prepared on PET substrate by RF magnetron sputtering;Miao;Vacuum,2014

5. Influence of Ag thickness on the properties of TiO2/Ag/TiO2 trilayer films;Kim;J. Korean Soc. Heat Treat.,2015

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1. Transparent metal oxides in OLED devices;Metal Oxides for Next-Generation Optoelectronic, Photonic, and Photovoltaic Applications;2024

2. n-type Sn substitution in amorphous IGZO film by sol-gel method: A promoter of hall mobility up to 65 cm2/V•s;Journal of Non-Crystalline Solids;2021-02

3. Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of ZnO/Ag/SnO2 Tri-Layer Films;Korean Journal of Metals and Materials;2019-08-05

4. Structure and optoelectronic properties of AZO/Al/AZO tri-layer films grown on flexible substrates;Journal of Materials Science: Materials in Electronics;2019-01-28

5. Effects of Al2O3 buffer layer and annealing on the structural and optoelectronic properties of AZO films;Journal of Materials Science: Materials in Electronics;2018-11-22

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