Effect of working pressure on growth of Cu(In,Ga)Se2 thin film deposited by sputtering from a single quaternary target-Reference-Cited by-同舟云学术

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Effect of working pressure on growth of Cu(In,Ga)Se2 thin film deposited by sputtering from a single quaternary target

Published:2014-02 Issue: Volume:116 Page:75-78
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Kong Hui,He Jun,Huang Ling,Zhu Liping,Sun Lin,Yang Pingxiong,Chu Junhao

Funder

National Natural Science Foundation of China

Science, Shanghai Rising-Star Program

Technology Commission of Shanghai Municipality

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

2. Solar cell efficiency tables (version 36)

3. Mass-production technology for CIGS modules

4. High‐efficiency CuInxGa1−xSe2solar cells made from (Inx,Ga1−x)2Se3precursor films

5. Fabrication of Cu(In, Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target

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1. Tunable structure of TiO2 deposited by DC magnetron sputtering to adsorb Cr (VI) and Fe (III) from water;Heliyon;2024-03

2. One‐Step DcMS and HiPIMS Sputtered CIGS Films from a Quaternary Target;physica status solidi (a);2023-10-12

3. The pressure dependence of structure and composition of sputtered AlCrSiTiMoO high entropy thin film;Journal of Alloys and Compounds;2021-01

4. RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication;Coatings;2020-08-14

5. Effect of calcium incorporation on properties of Cu(InGa)Se2 thin film and solar cell;Materials Research Express;2019-07-17

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