Anodic bonding of silicon onto glass by ion-cut technique and their characterization using high resolution X-ray diffraction studies-Reference-Cited by-同舟云学术

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Anodic bonding of silicon onto glass by ion-cut technique and their characterization using high resolution X-ray diffraction studies

Published:2007-06 Issue:14-15 Volume:61 Page:3017-3020
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Maurya K.K.,Halder S.K.,Chowdhury S.P.,Dutt M.B.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Mechanism of anodic bonding of silicon to Pyrex glass;Albaugh,1988

2. Hermetic glass sealing by electrostatic bonding;Younger;J. Non-Cryst. Solids,1980

3. Single crystal Si layers on glass formed by ion cutting;Cai;J. Appl. Phys.,2002

4. P. Clarke, Sharp sets roadmap for Moore's Law of silicon-on-glass: System-on-display-panel circuits are set to go sub-micron, EE Times, UK Dt, 2004 (30th June).

5. Nanostructured layers in high temperature pressure treatred silicon implanted with hydrogen/helium;Misiuk;Mater. Phys. Mech.,2002

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on the effects of low-temperature anodic bonding and its reliability for MEMS packaging using destructive and non-destructive techniques;Journal of Materials Science: Materials in Electronics;2017-10-04

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