Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {1 01¯m} faceted surface-Reference-Cited by-同舟云学术

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Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {1 01¯m} faceted surface

Published:2017-12 Issue: Volume:208 Page:19-22
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Xue Junjun,Cai Qing,Zhang Baohua,Ge Mei,Chen Dunjun,Chen Jiangwei,Zhi Ting,Wang Lianhui,Zhang Rong,Zheng Youdou

Funder

NSFJS

NSFC

USRJS

NUPTSF

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Synthesis, photoluminescence and field emission properties of well aligned/well patterned conical shape GaN nanorods

2. Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties

3. Pre-treatment effect of aqueous NH3 on conductivity enhancement and PL properties of GaN nanowires

4. Indium-induced changes in GaN(0001) surface morphology

5. Evidence from the Surface Morphology for Nonlinear Growth of Epitaxial GaAs Films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulsed Laser Deposition of In0.1Ga0.9N Nanoshapes by Nd:YAG Technique;Coatings;2020-05-10

2. Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes;IEEE Photonics Technology Letters;2019-11-01

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