Effect of yttrium doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin film
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Lanthanum-substituted bismuth titanate for use in non-volatile memories
2. Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by chemical solution deposition
3. Electrical properties of V-doped Bi3.15Nd0.85Ti3O12 thin films with different contents
4. Ferroelectric properties of sol-gel prepared La- and Nd-substituted, and Nb-co-substituted bismuth titanate using polymeric additives
5. Large remanent polarization of cerium-modified bismuth–titanate thin films for ferroelectric random access memories
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1. Fatigue free relaxor ferroelectric and electrocatalytic hydrogen evolution of yttrium substituted BaBi2Nb2O9 layered structured nanoceramics for energy storage application;Ceramics International;2023-01
2. Deposition of transistion metal Mn doped BTO thin films by sol–gel technique;Journal of Materials Science: Materials in Electronics;2018-05-29
3. Enhanced Ferroelectric Polarization in Laser-ablated Bi4Ti3O12 Thin Films by Controlling Preferred Orientation;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2018-04
4. Synthesis of ferroelectric powders of bismuth titanate doped with yttrium;Glass Physics and Chemistry;2015-07
5. Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method;Science and Engineering of Composite Materials;2015-01-01
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