Erratum to “Selective epitaxial growth of Si1−Ge films via the alternating gas supply of Si2H6, GeH4, and Cl2: Effects of Cl2 exposure” [Mater. Lett. (2012) 89–92]
-
Published:2012-12
Issue:
Volume:89
Page:354-355
-
ISSN:0167-577X
-
Container-title:Materials Letters
-
language:en
-
Short-container-title:Materials Letters
Author:
Park Sang-Joon,Baik Sunggi,Kim Hyugjun
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science